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Articles by author: Fabrizio Roccaforte

• 4H-SiC Schottky Array Photodiodes for UV Imaging Application Based on the Pinch-off Surface Effect
  Published in: Silicon Carbide and Related Materials 2006 (p945)
• Activation Study of Implanted N⁺ in 6H-SiC by Scanning Capacitance Microscopy
  Published in: Silicon Carbide and Related Materials - 2002 (p375)
• Analysis of the Electrical Activation of P⁺ Implanted Layers as a Function of the Heating Rate of the Annealing Process
  Published in: Silicon Carbide and Related Materials 2006 (p571)
• Annealing Temperature Dependence of the Electrically Active Profiles and Surface Roughness in Multiple Al Implanted 4H-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p603)
• Clustering of Gold on 6H-SiC and Local Nanoscale Electrical Properties
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p517)
• Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results
  Published in: Silicon Carbide and Related Materials - 2002 (p827)
• Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes
  Published in: Silicon Carbide and Related Materials 2005 (p1167)
• Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p493)
• Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN
  Published in: Silicon Carbide and Related Materials 2006 (p1027)
• Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2004 (p485)
• Defects in He⁺ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements
  Published in: Silicon Carbide and Related Materials 2003 (p493)
• Demonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier Diodes
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p331)
• Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p713)
• Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC
  Published in: Silicon Carbide and Related Materials 2011 (p825)
• Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes
  Published in: Silicon Carbide and Related Materials 2004 (p429)