Papers by Author: Fei Bin Hsiao

Abstract: Nano-imprinting Lithography (NIL) has been considered as the most promising technique for nano-scaled fabrication and patterning. Recently, a new approach known as Laser-Assisted Direct Imprinting(LADI) has been proposed and demonstrated as an even more efficient way for direct nanofabrication and nanopatterning. In this study, we focused on silicon materials and utilized a single KrF excimer laser pulse (248 nm wavelength and 30 ns pulse duration) as the heating source. Molds of micro-scaled size have been prepared using conventional photolithography techniques. A working platform based on an Excimer Laser Micro-Machining system is constructed for LADI process. The influence of laser fluence and the imprinted pressure on the resulting structures was verifying by varying the laser fluence (1.0 ~ 1.2 J/cm2) and the imprinted load (3 ~ 9kg). The results have shown that the morphology and the imprinted depth were directly related to the laser fluence and the imprinted pressure. Quantitative data are obtained and will be addressed.

Abstract: In this paper, we report a method for determining the residual thickness of resist layer during e-beam lithography processes. The method is based on the energy dispersive x-ray spectroscopic (EDS) measurements on a silicon substrate deposited with a PMMA layer. The PMMA layer acts as the resist layer in e-beam lithography. From a calibration test, an empirical relationship is established between the EDS signal, electron energy, and PMMA film thickness. Form this empirical relationship the residual PMMA layer thickness after e-beam exposure and developing can be determined within an accuracy of 83%, which is very important to the subsequent etching processes. An important feature of the proposed method is that its lateral resolution depends only on the focused e-beam spot size and can be in the order of nm. With such resolution, the thickness of the resist layer under few nm line width can be measured. The proposed method to estimate the residual resist layer thickness plays a vital role in nano-fabrication or nano-patterning based on e-beam lithography technology.