Papers by Author: Feng Hou

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Abstract: Effect of NaAc on the anodic growth of TiO2 nanotube arrays is described. NaAc-added approach yields longer nanotubes relative to samples grown from NaAc-free electrolyte. And the growth rate of TiO2 nanotubes has pH independency in NaAc-added electrolytes. The key to achieve a high aspect ratio TiO2 nanotube arrays is to decrease the chemical dissolution rate at the mouth of the tube by adding NaAc as protective coating. Adsorption of Ac- species on the TiO2 surface is shown to markedly decrease the chemical dissolution rate of the tube mouth, resulting in longer nanotube length.
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Abstract: Silicon nitride materials with low dielectric properties were prepared using nano and micron silicon nitride powders as raw materials and the green bodies were sintered with cordierite as sintering additive in flowing nitrogen. The additives of cordierite powders prepared by sol-gel method and solidstate reaction method could greatly decrease the sintering temperature. The dielectric constant of materials decreased as sintering temperature fell, whereas the strength showed relatively low as the low sintering temperature. XRD analysis showed the main phase of material was Si2N2O, which indicated that the Si3N4 could be integrated with SiO2. Porous structures were observed by SEM, showing compact sintering cannot be achieved at these temperatures, explaining the low strength.
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Abstract: A high solid loading of dispersed silicon nitride slurry was prepared with various dispersants, which allowed a stable silicon nitride suspension with sintering additives (cordierite) in alkaline regions to a solid content of 45 vol%. Gum arabic, PMAA-NH4, TMAH, PAA-NH4 and their composites were selected as dispersants. The results suggested that the composite dispersant which was obtained using PAA-NH4 and TMAH with the ratio in 4:1 was more effective in aqueous silicon nitride powder suspensions system than simplex dispersant. The green bodies derived exhibited a mechanical strength as high as 8.7MPa and SEM photos revealed that the green body also had a high homogeneity.
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Abstract: Tungsten oxide thin films were prepared by an inorganic-sol-gel dip-coating process, where the sol was obtained by adding citric acid, as chelating agent, to the ammonia solution of tungstic acid. The resultant thin films were a mixture of monoclinic and tetragonal phases of WO3 and, after being pretreated at 600°C and sintered at 650°C, the average grain size of the polycrystalline films was about 500 nm. The gas-sensing properties of WO3 thin films were tested at temperatures ranging from 500° to 600°C and in nitrogen gas containing 5vol% O2 or 5vol% H2. The WO3 sensors exhibited a good sensitivity and response speed at the temperature of 550°C.
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Abstract: Strontium bismuth titanate (SBTi) matrix composites containing Ag particles were synthesized by the conventional solid-state reaction method. The SBTi/Ag composites have been characterized by various techniques: x-ray diffraction, optical metallurgical microscope, scanning electron microscope and dielectric measurement. It is found that Ag doping significantly affect the physical properties of composites. By adding Ag particles to the SBTi matrix, the single-phase layered perovskite structure of the matrix is preserved and the sintering temperature of the system decrease from 1120°C of the single-phase SBTi to 950°C of the SBTi/Ag composites. With the increase of sintering temperature, the size of silver particles increase, but the SBTi grains have no significant growth. The SBTi/Ag composites show a significant change of the dielectric constant. By increasing Ag content, a gradual increase of the dielectric constant is observed and the dielectric loss of the SBTi/Ag composites remain unchanged when the temperature rangers from room temperature to 200°C, however, the Curie peak of dielectric constant is repressed, which has been interpreted based on the effective dielectric fields developed around conducting phases and the inhibition effect of nonferroelectric secondary phase to electro-strain.
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