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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Francesco La Via
62 papers on 5 pages:
1
[2]
[3]
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[5]
[next]
3C-SiC Hetero-Epitaxial Films for Sensors Fabrication
Published in:
Smart Materials & Micro/Nanosystems
(p411)
3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)
Published in:
Silicon Carbide and Related Materials 2009
(p135)
3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.
Published in:
Silicon Carbide and Related Materials 2007
(p243)
A Study of Structural Defects in 3C-SiC Hetero-Epitaxial Films
Published in:
Silicon Carbide and Related Materials 2009
(p371)
Activation Study of Implanted N
+
in 6H-SiC by Scanning Capacitance Microscopy
Published in:
Silicon Carbide and Related Materials - 2002
(p375)
Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application
Published in:
Silicon Carbide and Related Materials 2010
(p133)
Atomistic and Continuum Simulations of the Homo-Epitaxial Growth of SiC
Published in:
Silicon Carbide and Related Materials 2008
(p73)
Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films
Published in:
Silicon Carbide and Related Materials 2009
(p167)
Carbonization Study of Different Silicon Orientations
Published in:
Silicon Carbide and Related Materials 2006
(p171)
Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
Published in:
Silicon Carbide and Related Materials 2011
(p113)
Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results
Published in:
Silicon Carbide and Related Materials - 2002
(p827)
Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC
Published in:
Silicon Carbide and Related Materials 2007
(p619)
Complete Determination of the Local Stress Field in Epitaxial Thin Films Using Single Microstructure
Published in:
Silicon Carbide and Related Materials 2010
(p213)
Consideration on the Thermal Expansion of 3C-SiC Epitaxial Layer on Si Substrates
Published in:
HeteroSiC & WASMPE 2011
(p31)
Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers
Published in:
Silicon Carbide and Related Materials 2004
(p485)
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