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Articles by author: Francesco La Via

• 3C-SiC Hetero-Epitaxial Films for Sensors Fabrication
  Published in: Smart Materials & Micro/Nanosystems (p411)
• 3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)
  Published in: Silicon Carbide and Related Materials 2009 (p135)
• 3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.
  Published in: Silicon Carbide and Related Materials 2007 (p243)
• A Study of Structural Defects in 3C-SiC Hetero-Epitaxial Films
  Published in: Silicon Carbide and Related Materials 2009 (p371)
• Activation Study of Implanted N⁺ in 6H-SiC by Scanning Capacitance Microscopy
  Published in: Silicon Carbide and Related Materials - 2002 (p375)
• Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application
  Published in: Silicon Carbide and Related Materials 2010 (p133)
• Atomistic and Continuum Simulations of the Homo-Epitaxial Growth of SiC
  Published in: Silicon Carbide and Related Materials 2008 (p73)
• Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films
  Published in: Silicon Carbide and Related Materials 2009 (p167)
• Carbonization Study of Different Silicon Orientations
  Published in: Silicon Carbide and Related Materials 2006 (p171)
• Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
  Published in: Silicon Carbide and Related Materials 2011 (p113)
• Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results
  Published in: Silicon Carbide and Related Materials - 2002 (p827)
• Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p619)
• Complete Determination of the Local Stress Field in Epitaxial Thin Films Using Single Microstructure
  Published in: Silicon Carbide and Related Materials 2010 (p213)
• Consideration on the Thermal Expansion of 3C-SiC Epitaxial Layer on Si Substrates
  Published in: HeteroSiC & WASMPE 2011 (p31)
• Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2004 (p485)