HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Franziska Christine Beyer

• Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2010 (p75)
• Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
  Published in: Silicon Carbide and Related Materials 2010 (p59)
• Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
  Published in: Silicon Carbide and Related Materials 2011 (p113)
• Chloride-Based SiC Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2008 (p89)
• Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
  Published in: Silicon Carbide and Related Materials 2007 (p405)
• Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy
  Published in: Silicon Carbide and Related Materials 2008 (p373)
• Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method
  Published in: Silicon Carbide and Related Materials 2011 (p129)
• Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
  Published in: Silicon Carbide and Related Materials 2011 (p211)
• Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p371)
• Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p435)
• Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2010 (p249)
• Thick Epilayer for Power Devices
  Published in: Silicon Carbide and Related Materials 2006 (p47)
• Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor
  Published in: Silicon Carbide and Related Materials 2007 (p115)