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Articles by author: Frédéric Cayrel

• Active Devices for Power Electronics: SiC vs III-N Compounds – The Case of Schottky Rectifiers
  Published in: Silicon Carbide and Related Materials 2009 (p879)
• Diffusion and Activation of Ultra Shallow Boron Implants in Silicon in Proximity of Voids
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p357)
• Dopant Segregation on Cavities Induced by Helium Implantation: Impact of the Doping Level
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p599)
• Dopant Segregation on Cavities Induced by Helium Implantation: The Case of Boron and Phosphorus
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p309)
• Doping Effect of Helium Induced Nanocavities in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p325)
• Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p337)
• Electrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and C­TLM Measurements
  Published in: Silicon Carbide and Related Materials 2010 (p193)
• Fabrication Issues of 4H-SiC Static Induction Transistors
  Published in: Silicon Carbide and Related Materials 2011 (p1049)
• Impact of Hydrogen Implantation on Helium Implantation Induced Defects
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p309)
• Process Parameters Influence on Specific Contact Resistance (SCR) Value for TiAl Ohmic Contacts on GaN Grown on Sapphire
  Published in: Silicon Carbide and Related Materials 2008 (p955)
• Properties of Cavities Induced by Helium Implantation in Silicon and their Applications to Devices
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p297)