Papers by Author: G.H. Tariq

Abstract: The direct energy band gap in the range of ~1.5eV and the high absorption coefficient (~105cm-1) makes Cadmium Telluride (CdTe) a suitable material for fabrication of thin film solar cells. Thin film solar cells based on CdTe (~ 1cm area) achieved efficiency of 15.6% on a laboratory scale. CdTe thin films were deposited by thermal evaporation technique under vacuum 2×10-5mbar on glass and stainless steel (SS) substrates. During deposition substrates temperature was kept same at 200C for all samples. The structural properties were determined by the X-ray Diffraction (XRD) patterns. All samples exhibit polycrystalline nature. Dependence of different structural parameters such as lattice parameter, micro strain, and grain size and dislocation density on thickness was studied. Also the influence of the different substrates on these parameters was investigated. The analysis showed that the preferential orientation of films was dependent on the substrate type.

Abstract: Ni-Zn ferrite nanoparticles with Cr doping, having the general formula Ni_0.5Zn_0.5Cr_xFe_2-xO₄ (x = 0.1, 0.3, 0.5) were prepared by simplified sol-gel method and sintered at 750±5°C. The structural and magnetic properties of the samples sintered at 750±5°C were studied. From X-ray diffraction (XRD) patterns, it was confirmed that the samples have single phase spinel structure. The crystallite size was calculated from the most intense peak (3 1 1) using the Debye Scherrer formula and was found to be in the range of 29-34 nm. The scanning electron microscope images showed that the particle size of the samples were in the range 60-120nm. Quantum design PPMS model 6700 was used to study magnetic properties of these samples. The effect of Cr doping on the magnetic properties was explained on the basis of cations distribution in the crystal structure.

Abstract: Strontium hexa-ferrite nanoparticles were prepared successfully by simple co-precipitation method. The XRD analysis confirmed the formation of single phase MFe₁₂O₁₉ (M=Sr). Parameters such as crystallite size, lattice constant, X-ray density and porosity were calculated from the X-ray diffraction data. The crystallite sizes were in the range 12-26 nm. The temperature dependent dc electrical resistivity measurements showed that the material was highly. Dielectric constant and dielectric loss factor (tanδ) were measured in the frequency range 20Hz-3MHz. The anomalous behavior of dielectric loss revealed a very important behavior of the prepared sample of SrFe₁₂O₁₉ in different frequency regions and that could be used for new applications of this material. The magnetic properties were determined from the hystersis loop obtained from vibrating sample magnetometer (VSM). The Curie temperature was determined by susceptometer. This material is potentially suitable for use as a recording medium in identification cards and credit cards and for the fabrication of permanent magnets.

Abstract: Phase purity, particle size and its distribution contributes a lot to the physical properties of M-type hexa-ferrites. These parameters are strongly influenced by the variation in synthesis parameters. In the present work, effect of synthesis parameters such as molar ratio (Fe/Sr) and volume rate of addition of precipitating agent on M-type hexa-ferrite (SrFe₁₂O₁₉) prepared by co-precipitation method have been investigated systematically. The molar ratio (Fe/Sr) in SrFe₁₂O₁₉ was varied as 12, 11, 10, 09, and 08. X-ray diffraction analysis revealed that molar ratio does not affect the phase purity. X-ray diffraction analysis of the samples prepared with different volume rate of addition of precipitating agent indicated that phase purity and micro-structural properties of SrFe₁₂O₁₉ are greatly influenced by the above synthesis parameter. High volume rate of addition of precipitating agent resulted in high phase purity, smaller particle size, and narrow particle size distribution.

Abstract: Polycrystalline thin films of Cadmium Sulfide (CdS) have been extensively studied for application as a window layer in CdTe/CdS and CIGS/CdS thin film solar cells. Higher efficiency of solar cells is possible by a better conductivity of a window layer, which can be achieved by doping these films with suitable elements. CdS thin films were deposited on properly cleaned glass substrate by thermal evaporation technique under vacuum2×10-5mbar. Films were structurally characterized by using X-ray diffraction. The X-ray diffraction spectra showed that the thin films were polycrystalline in nature. Aluminum was doped chemically in as deposited and annealed thin films by immersing films in AlNO33.9H2O solutions respectively. Comparison between the effects of different doping ratios on the structural and optical properties of the films was investigated. Higher doping ratios have improved the electrical properties by decreasing the resistivity of the films and slightly changed the bandgap energy Eg. The grain size, strain, and dislocation density were calculated for as-deposited and annealed films.

Abstract: To overcome the naturally existing Schottky barrier problem between p-CdTe and any metal, an intermediate semiconductor thin buffer layer is a better choice prior to the final metallization for contact. Among many investigated back contact materials the ZnTe is suitable as a buffer layer. ZnTe thin films were deposited onto glass substrates by the thermal evaporation technique under vacuum ~2×10-5mbar. Undoped ZnTe thin films are highly resistive, extrinsic doping of Cu was made to improve the electrical conductivity. Films were doped by immersing in Cu N_O32.5H2O solutions for Cu doping. To optimize the growth parameters the prepared films were characterized using various techniques. The structural analysis of these films was performed by X-ray diffraction (XRD) technique and optical transmission. X-ray diffraction identified the phases present in these films and also observed that the prepared films were polycrystalline. Also the spectral dependence of absorption coefficient was determined from spectrophotometer. Energy band gap index were calculated from obtained optical measurements data.