HOME
CONTACT
My eBook
Username:
Password:
FULLTEXT SEARCH
NEW:
Advanced Search
MSF
>
Materials Science Forum
KEM
>
Key Engineering Materials
SSP
>
Solid State Phenomena
DDF
>
Defect and Diffusion Forum
AMM
>
Applied Mechanics and Materials
AMR
>
Advanced Materials Research
AST
>
Advances in Science and Technology
JNanoR
>
Journal of Nano Research
JBBTE
>
Journal of Biomimetics, Biomaterials, and Tissue Engineering
JMNM
>
Journal of Metastable and Nanocrystalline Materials
JERA
>
International Journal of Engineering Research in Africa
AEF
>
Advanced Engineering Forum
NH
>
Nano Hybrids
> @scientific.net
CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Gabriel Ferro
81 papers on 6 pages:
1
[2]
[3]
...
[6]
[next]
3C-SiC Islands Formation on 6H-SiC(0001) Substrate from a Liquid Phase
Published in:
Silicon Carbide and Related Materials 2007
(p203)
3C-SiC MOS Based Devices: From Material Growth to Device Characterization
Published in:
Silicon Carbide and Related Materials 2010
(p433)
Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals
Published in:
Silicon Carbide and Related Materials 2000
(p85)
Analysis of SiC Islands Formation during First Steps of Si Carbonization Process
Published in:
Silicon Carbide and Related Materials 2004
(p555)
Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers
Published in:
Silicon Carbide and Related Materials 2006
(p65)
Buried Selective Growth of p-Doped SiC by VLS Epitaxy
Published in:
Silicon Carbide and Related Materials 2011
(p169)
Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means
Published in:
Silicon Carbide and Related Materials 2007
(p509)
Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates
Published in:
Silicon Carbide and Related Materials 2003
(p265)
Comparative Evaluation of Free-Standing 3C-SiC Crystals
Published in:
Silicon Carbide and Related Materials 2004
(p229)
Comparison between Ar and N
2
for High-Temperature Treatment of 4H-SiC Substrates
Published in:
Silicon Carbide and Related Materials - 2002
(p119)
Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism
Published in:
Silicon Carbide and Related Materials 2003
(p245)
Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers
Published in:
Silicon Carbide and Related Materials 2003
(p1561)
Dots Formation by CVD in the SiC-Si Hetero-System
Published in:
Silicon Carbide and Related Materials 2007
(p571)
Effect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100)
Published in:
Silicon Carbide and Related Materials 2005
(p1563)
Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers
Published in:
Silicon Carbide and Related Materials 2001
(p287)
Username:
Password: