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Articles by author: Gabriel Ferro

• 3C-SiC Islands Formation on 6H-SiC(0001) Substrate from a Liquid Phase
  Published in: Silicon Carbide and Related Materials 2007 (p203)
• 3C-SiC MOS Based Devices: From Material Growth to Device Characterization
  Published in: Silicon Carbide and Related Materials 2010 (p433)
• Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals
  Published in: Silicon Carbide and Related Materials 2000 (p85)
• Analysis of SiC Islands Formation during First Steps of Si Carbonization Process
  Published in: Silicon Carbide and Related Materials 2004 (p555)
• Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers
  Published in: Silicon Carbide and Related Materials 2006 (p65)
• Buried Selective Growth of p-Doped SiC by VLS Epitaxy
  Published in: Silicon Carbide and Related Materials 2011 (p169)
• Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means
  Published in: Silicon Carbide and Related Materials 2007 (p509)
• Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates
  Published in: Silicon Carbide and Related Materials 2003 (p265)
• Comparative Evaluation of Free-Standing 3C-SiC Crystals
  Published in: Silicon Carbide and Related Materials 2004 (p229)
• Comparison between Ar and N₂ for High-Temperature Treatment of 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p119)
• Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism
  Published in: Silicon Carbide and Related Materials 2003 (p245)
• Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2003 (p1561)
• Dots Formation by CVD in the SiC-Si Hetero-System
  Published in: Silicon Carbide and Related Materials 2007 (p571)
• Effect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100)
  Published in: Silicon Carbide and Related Materials 2005 (p1563)
• Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers
  Published in: Silicon Carbide and Related Materials 2001 (p287)