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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Gagik A. Oganesyan
14 papers on 1 page:
1
"New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress
Published in:
Gettering and Defect Engineering in Semiconductor Technology XI
(p181)
Electron Mobility in Moderately Doped Si
1-x
Ge
x
Published in:
Gettering and Defect Engineering in Semiconductor Technology XIV
(p31)
EPR/ENDOR Investigation on the Nature of Heat Treatment Centers in Silicon
Published in:
Defects in Semiconductors 17
(p141)
Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures
Published in:
Silicon Carbide and Related Materials 2007
(p541)
Impact of Compressive Stress on the Formation of Thermal Donors in Heat-Treated Silicon
Published in:
Gettering anf Defect Engineering in Semiconductor Technology IX
(p259)
Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films
Published in:
Silicon Carbide and Related Materials 2008
(p335)
Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures
Published in:
Silicon Carbide and Related Materials 2009
(p259)
New Donors in Heat-Treated Cz-Si, Their Components and Formation Kinetics
Published in:
Gettering and Defect Engineering in Semiconductor Technology VI
(p259)
Oxygen-Related Thermal Donors in Heat-Treated Cz-Si
Published in:
Defects in Semiconductors I
(p505)
Peculiarities in the Defect Behavior in Heat-Treated Cz-Si with a Low and High Oxygen Content
Published in:
Gettering and Defect Engineering in Semiconductor Technology
(p173)
Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals
Published in:
Gettering and Defect Engineering in Semiconductor Technology XIV
(p313)
P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates
Published in:
Silicon Carbide and Related Materials 2008
(p177)
The Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High Pressures
Published in:
Gettering and Defect Engineering in Semiconductor Technology XIII
(p123)
Thermal Donors in Silicon Implanted with Rare Earth Impurities
Published in:
Gettering anf Defect Engineering in Semiconductor Technology IX
(p93)
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