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Articles by author: Galyna Melnychuk

• 4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method
  Published in: Silicon Carbide and Related Materials 2009 (p925)
• Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2008 (p581)
• Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2008 (p121)
• Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method
  Published in: Silicon Carbide and Related Materials 2007 (p163)
• Lower-Temperature Epitaxial Growth of 4H-SiC Using CH₃Cl Carbon Gas Precursor
  Published in: Silicon Carbide and Related Materials 2005 (p167)
• Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive
  Published in: Silicon Carbide and Related Materials 2006 (p133)
• Low-Temperature Homoepitaxial Growth with SiCl₄ Precursor Compared to HCl Assisted SiH₄-Based Growth
  Published in: Silicon Carbide and Related Materials 2008 (p97)
• Nitrogen Doping in Low-Temperature Halo-Carbon Homoepitaxial Growth of SiC
  Published in: Silicon Carbide and Related Materials 2007 (p159)
• Use of SiCl₄ as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p111)