Papers by Author: George A. Rozgonyi

Abstract: Nanoindentation was used to measure the mechanical properties of 200mm diameter (100) CZ Si wafers subjected to the initiation and propagation of micro-crack defects. Silicon amorphization and phase changes were observed and accompanied by a monotonic decrease in hardness and elastic modulus, as the nanoindent tip approached the micro-crack shank or point. Identification and profiling of these localized phase transitions was obtained in the vicinity of the micro-cracks using electron back-scattered diffraction (EBSD) and Raman spectroscopy. It was found that the amorphous Si regions extend for about 10 µm at the edges and ahead of a moving crack tip. Wafers from ingots grown at faster growth rates with enhanced thermal gradients and associated point defect/impurity produce large localized stresses in the wafer core, which are capable of changing the path of propagating cracks. FTIR and Raman spectroscopy analysis were used to quantify local stresses due to radial oxygen precipitate variations. The resulting stress modified crack deviates considerably from energetically favorable [110]/(111) directions, following a radial path suggesting a ductile fracture failure mode.

Abstract: This paper describes a series of electrical measurements and sample modifications that enabled the electrical properties of hybrid-orientation direct silicon bonded wafer interfaces to be determined. It is shown that the carrier transport across this near-surface (110)Si/(100)Si boundary is dictated by the defects present at the bond interface. These interface states are believed to pin the Fermi-level, producing a conduction barrier with a thermal activation energy Ea = 0.56eV. The defect band has been identified by deep-level transient spectroscopy and associated with the defect states typically observed in plastically deformed silicon. The carrier transport behavior across the bonding interface, as well as the observed interface trap levels are therefore attributed to the dislocation network present at the bonding interface. The spatial uniformity of the interface properties have been evaluated by TEM, electron-beam induced current microscopy, photoconductive decay and conduction measurements.

Abstract: A novel crystal growth method has been developed for the production of ingots, bricks and wafers for solar cells. Monocrystallinity is achievable over large volumes with minimal dislocation incorporation. The resulting defect types, densities and interactions are described both microscopically for wafers and macroscopically for the ingot, looking closely at the impact of the defects on minority carrier lifetime. Solar cells of 156 cm2 size have been produced ranging up to 17% in efficiency using industrial screen print processes.

Abstract: The electrical activity of stacking faults (SFs) in multicrystalline sheet silicon has been examined by correlating EBIC(electron beam induced current), preferential defect etching, and microwave photo-conductance decay (PCD) lifetime measurements. Following a three hour 1060 0C annealing the interstitial oxygen concentration decreased from 14 to 4.5 x 1017 cm-3, during which time a high density of SFs were generated in the center of individual large grains. Subsequent EBIC contrast variation within individual large grains was correlated with the local SF density revealed by preferential etching. In addition, a more quantitative intra-grain lifetime was obtained from high spatial resolution PCD measurements. It was found that an SF density of 1 to 2 x 106 cm-2 produces a lifetime limitation in sheet silicon which corresponds to a recombination lifetime of ~2 µs.