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Articles by author: George R. Brandes

• 4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth
  Published in: Silicon Carbide and Related Materials - 1999 (p185)
• Diamond Field-Assisted Moderator
  Published in: Positron Annihilation - ICPA-11 (p653)
• Growth of Low Micropipe Density SiC Wafers
  Published in: Silicon Carbide and Related Materials - 1999 (p437)
• Positron Annihilation Microprobe Resolution Limits
  Published in: Positrons at Metallic Surfaces (p341)
• Positron Mobility in Natural Diamond
  Published in: Positron Annihilation - ICPA-9 (p763)
• Positron Workfunction of Diamond C(100) Surfaces
  Published in: Positron Annihilation - ICPA-9 (p1363)
• Solid Neon Moderator with a Large Activity Source
  Published in: Positron Annihilation - ICPA-9 (p1359)
• Sublimation Growth of 50mm Diameter SiC Wafers
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p13)