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Articles by author: Gil Yong Chung

• 4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer
  Published in: Silicon Carbide and Related Materials 2010 (p123)
• A New Method of Mapping and Counting Micropipes in SiC Wafers
  Published in: Silicon Carbide and Related Materials 2005 (p447)
• A Study of Nitrogen Incorporation in PVT Growth of n⁺ 4H SiC
  Published in: Silicon Carbide and Related Materials 2005 (p59)
• Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers
  Published in: Silicon Carbide and Related Materials 2008 (p283)
• Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers
  Published in: Silicon Carbide and Related Materials 2006 (p323)
• Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates
  Published in: Silicon Carbide and Related Materials 2006 (p69)
• Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes
  Published in: Silicon Carbide and Related Materials 2009 (p905)
• Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers
  Published in: Silicon Carbide and Related Materials 2007 (p485)
• Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor
  Published in: Silicon Carbide and Related Materials 2005 (p175)
• Infrared PL Signatures of n-Type Bulk SiC Substrates with Nitrogen Impurity Concentration between 10¹⁶ and 10¹⁷ cm^-3
  Published in: Silicon Carbide and Related Materials 2007 (p449)
• Non-Equilibrium Carrier Diffusion and Recombination in Semi-Insulating PVT Grown Bulk 6H-SiC Crystals
  Published in: Silicon Carbide and Related Materials 2005 (p469)
• Scaling of Chlorosilane SiC CVD to Multi-Wafer Epitaxy System
  Published in: Silicon Carbide and Related Materials 2006 (p145)
• SiC Substrate Doping Profiles Using Commercial Optical Scanners
  Published in: Silicon Carbide and Related Materials 2005 (p725)
• Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers
  Published in: Silicon Carbide and Related Materials 2008 (p287)