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Articles by author: H. Angermann

• Effect of Preparation-Induced Surface Morphology on the Stability of H-Terminated Si(111) and Si(100) Surfaces
  Published in: Ultra Clean Processing of Silicon Surfaces VI (p179)
• Electronic Properties of Wet-Chemically Prepared Oxide Layers
  Published in: Ultra Clean Processing of Silicon Surfaces V (p181)
• Interface State Densities and Surface Charge on Wet-Chemically Prepared Si(100) Surfaces
  Published in: Ultra Clean Processing of Silicon Surfaces VII (p23)
• Surface States and Recombination Loss on Wet-Chemically Passivated Si Studied by Surface Photovoltage (SPV) and Photoluminescence (PL)
  Published in: Ultra Clean Processing of Semiconductor Surfaces VIII (p41)
• Surface Texturization and Interface Passivation of Mono-Crystalline Silicon Substrates by Wet Chemical Treatments
  Published in: Ultra Clean Processing of Semiconductor Surfaces IX (p223)
• Wet-Chemically Passivated Silicon Interfaces: Characterization by Surface Photovoltage Measurements, and Spectroscopic Ellipsometry Methods
  Published in: Polycrystalline Semiconductors V (p515)