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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Hervé Peyre
13 papers on 1 page:
1
Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC
Published in:
Silicon Carbide and Related Materials 2008
(p49)
From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer Stacks
Published in:
Silicon Carbide and Related Materials - 2002
(p403)
Growth and Characterization of
13
C Enriched 4H-SiC for Fundamental Materials Studies
Published in:
Silicon Carbide and Related Materials 2006
(p13)
Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI
Published in:
Silicon Carbide and Related Materials 2001
(p343)
Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"
Published in:
Silicon Carbide and Related Materials 2003
(p273)
Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy
Published in:
Silicon Carbide and Related Materials 2009
(p179)
LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates
Published in:
Silicon Carbide and Related Materials 2009
(p415)
Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity
Published in:
Silicon Carbide and Related Materials 2008
(p259)
Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC
Published in:
Silicon Carbide and Related Materials 2011
(p589)
SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts
Published in:
Silicon Carbide and Related Materials 2006
(p477)
SIMS Investigation of Ge
x
(4H-SiC)
1-x
Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2
Published in:
Silicon Carbide and Related Materials 2008
(p465)
Trends in Dopant Incorporation for 3C-SiC Films on Silicon
Published in:
Silicon Carbide and Related Materials 2006
(p207)
Visible Light Laser Irradiation: a Tool for Implantation Damage Reduction
Published in:
Silicon Carbide and Related Materials 2003
(p941)
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