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Articles by author: Hiromu Shiomi

• 4H-SiC MOSFETs on (03-38) Face
  Published in: Silicon Carbide and Related Materials 2001 (p1065)
• 6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method
  Published in: Silicon Carbide and Related Materials 2005 (p263)
• Characterization of 2 Inch SiC Wafers Made by the Sublimation Method
  Published in: Silicon Carbide and Related Materials 2000 (p267)
• Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8
  Published in: Silicon Carbide and Related Materials 2001 (p407)
• Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy
  Published in: Silicon Carbide and Related Materials 2007 (p967)
• Characterization of SiC Wafers by Photoluminescence Mapping
  Published in: Silicon Carbide and Related Materials 2005 (p711)
• Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes
  Published in: Silicon Carbide and Related Materials - 2002 (p197)
• Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds
  Published in: Silicon Carbide and Related Materials 2005 (p35)
• Improvement of SiC Wafer Warp by Annealing
  Published in: Silicon Carbide and Related Materials 2003 (p829)
• Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation
  Published in: Silicon Carbide and Related Materials 2006 (p275)
• Observation of 2in SiC Wafer by SWBXT at SPring-8
  Published in: Silicon Carbide and Related Materials 2001 (p411)
• Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC
  Published in: Silicon Carbide and Related Materials 2007 (p329)
• Polytype and Defect Control of Two Inch Diameter Bulk SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p485)
• Stress Distribution in 2in SiC Wafer Measured by Photoelastic Method
  Published in: Silicon Carbide and Related Materials 2001 (p403)
• Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method
  Published in: Silicon Carbide and Related Materials 2007 (p521)