HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Hiroshi Katayama-Yoshida

• A Codoping Method in GaN Proposed by Ab Initio Electronic-Structure Calculations
  Published in: Defects in Semiconductors 19 (p1185)
• Acceptor Compensation in Nitrogen Doped Zinc Selenide
  Published in: Defects in Semiconductors 18 (p297)
• Calculation of the Spin-Polarized Electronic Structure of Si: Fe^o_i in Super-Cell Full-Potential Linearized Augumented Plane Wave Method
  Published in: Defects in Semiconductors 14 (p61)
• Effect of Carbon on Anharmonic Vibration of Oxygen in Crystalline Silicon
  Published in: Defects in Semiconductors 17 (p957)
• Electronic Structure of Hydrogen and Shallow Acceptor Complexes in Silicon
  Published in: Defects in Semiconductors 15 (p973)
• Gettering Mechanism of Cu in Silicon Calculated from First Principles
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p115)
• Impurity Vibrations of Carbon-Oxygen Complexes in Crystalline Silicon
  Published in: Shallow Impurities in Semiconductors V (p81)
• Influence of Intrinsic Defects on the Electronic Structure of Non-Stoichiometric CuInS₂ Chalcopyrite Semiconductors
  Published in: Defects in Semiconductors 18 (p1667)
• Negative Effective-U and positive Effective-U Nature of the Bistable Dangling-Bonds in a-Si, a-Si:H and c-Si Studied by ab Initio Molecular-Dynamics Simulation
  Published in: Defects in Semiconductors 18 (p1001)
• Structural and Electronic Properties of Carbon-Hydrogen Complex in Silicon
  Published in: Defects in Semiconductors 18 (p897)
• Valence Controls and Codoping for Low-Resistivity n-Type Diamond by Ab Initio Molecular-Dynamics Simulation
  Published in: Defects in Semiconductors 19 (p799)