Authors: Teen Hang Meen, Chien Jung Huang, Yin Wei Chen, Liang Wen Ji, Chien Chen Diao, Ho Hua Chung
Abstract: In this research, applications of different TiO2 electrode structures on Dye-Sensitized Solar Cell
were investigated. The different TiO2 electrode structures include: (1) synthesis of TiO2 nano-particles
and TiO2 film electrode by sol-gel and spin-coating method; (2) fabrication of the TiO2 film electrode by
RF Sputtering; (3) fabrication of the rod TiO2 electrode by photo lithography. X-ray diffraction patterns
show that the best sintering temperature of nano-TiO2 thin film is 500oC, at which TiO2 anatase phase
forms best and the smallest particle-size (8-10 nm) can be obtained. Ultraviolet-visible absorption spectra
reveal that the rod TiO2 electrode with TCPP sensitizer adsorbed on has the best optical absorption from
400 nm to 700 nm. The results of current-voltage analyses reveal that the solar cell with rod TiO2
electrode has higher conversion efficiency than the others. This result also provides clear evidence for the
contact area between TiO2 electrode and TCPP sensitizer plays an important role on the efficiency of
dye-sensitized solar cell.
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Authors: Chien Chen Diao, Shih Feng Chien, Cheng Fu Yang, Hsien Wu Chan, Ying Chung Chen, Ho Hua Chung
Abstract: Most commercial ZnO varistors containing Bi2O3 exhibit excellent varistor properties, but they
have a few drawbacks due to Bi2O3 having high volatility and reactivity and higher sintering temperature.
In this study, V2O5 is added as the varistor forming oxide to lower down the sintering temperature of ZnO
varistors for the further developing the chip Varistor array by using the Ag as the inner electrode. It is
found that the sintering temperature of V2O5-added ZnO will be lower down to about 600oC. But the
addition of V2O5 has no improvement in the electrical characteristics, and they need many additives to
obtain the high performance. For that, the nonlinear properties in these Varistors can be improved by
incorporation of some oxide additives. Different MnOx oxides (MnO, MnO2, and Mn3O4) and CoOx
oxides (CoO and Co3O4)are used as the minor oxide additives. The influences of different MnOx and
CoOx oxides on the nonlinear voltage–current density (V-I) characteristics and the nonlinear exponent (α)
of V2O5-ZnO varistor will be well developed.
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Authors: Kai Huang Chen, Ying Chung Chen, Wei Kuo Chia, Zhi Sheng Chen, Cheng Fu Yang, Ho Hua Chung
Abstract: In this study, the effects of oxygen gas plasma on the surface treatment of Ba(Zr0.1Ti0.9)O3
(BZT) films are investigated. The influence of plasma on the structure is developed by using X-ray
diffraction patterns and the electrical characteristics are developed by using the MIM and MFIS
capacitor structure. Experiment results clearly indicate that the electrical characteristics of BZT film
have improved effectively within oxygen plasma surface treatment.
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Authors: Yin Fang Wei, Chia Hsiung Kao, Cheng Fu Yang, Ho Hua Chung, Hong Hsin Huang, Yao Sheng Yang
Abstract: In this study, piezoelectric materials 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 (NBT-BT)
composition with excess x wt% Bi2O3 (x=0, 1, 2, and 3) are investigated as a function of sintering
temperatures. The sintering characteristics and dielectric characteristics of excess Bi2O3-doped 0.95
(Na0.5Bi0.5)TiO3- 0.05 BaTiO3 ceramics are developed with the aid of SEM, XRD patterns, and
dielectric-temperature curves. The sintering process is carried out in air for 2h from 1120oC to
1200oC. Dielectric-temperature properties are investigated in the temperature range of 30oC~350oC at
the frequencies of 10KHz~1MHz. The maximum dielectric constants of NBT-BT ceramics first
increase with the increase of Bi2O3 content, reach the maximum at 1wt%- Bi2O3-added NBT-BT
ceramics, and then decrease with the further increase of Bi2O3 content. The maximum dielectric
constants of NBT-BT ceramics are almost unchanged as the measured frequency increases. The Curie
temperatures of NBT-BT ceramics are also developed.
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Authors: Cheng Fu Yang, Chien Min Cheng, Ho Hua Chung, Chao Chin Chan
Abstract: 5~15 wt% MgO-CaO-Al2O3-SiO2 (MCAS, fabricated by sol-gel method) glass is used as
the sintering aid of AlN ceramics. The sintering is proceeded from 1350oC~1550oC, scanning electron
microscope is used to observe the sintered morphologies and X-ray diffraction pattern are used to
confirm the crystal structures. From the SEM observations, as 10wt% and 15wt% MCAS is added,
AlN ceramics can be densified at 1500oC and 1450oC, which are much lower than the before studies
were. From the X-ray diffraction patterns, the crystal phases of MCAS-AlN ceramics are AlN, Al2O3,
and cordierite phases. In this study, the dielectric characteristics of MCAS-AlN ceramics are also
developed as a function of MCAS content and sintering temperature.
1868
Authors: Ho Hua Chung, Cheng Fu Yang, Yi Chang Chung, Cheng Yuan Kung
Abstract: In this study, ferroelectric materials with Bi-layered structure BaBi2Nb2O9 with excess x
wt% Bi2O3 (x=0, 1.5, and 3) are investigated as the main compositions, and the sintering is proceeded
from 1000oC~1100oC. The effect of Bi2O3 on the morphologies, crystal structure, and dielectric
characteristics of BaBi2Nb2O9 ceramics is developed with the aid of SEM, X-ray diffraction, and
dielectric-temperature curves. Dielectric properties are investigated in the temperature of 25oC~
465oC at frequency 10KHz~1MHz. It is found that sintering temperature and Bi2O3 content has no
apparent influence on the Curie temperatures, but they have large influence on the maximum
dielectric constants.
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