Papers by Author: Hong Deng

Abstract: As a circuit element, memristor behaves like a nonlinear resistor with memory. It is demonstrated as the fourth fundamental circuit element in addition to resistor, capacitor and inductor. This paper summarized the main progress in this field, such as, the development of models and mechanism, the selection of new materials, the experimental results, and the similarities and differences of unipolar and bipolar Resistive Switching Characteristics

Abstract: Resistive random access memory (RRAM) has attracted comprehensive attention from academia and industry as a new-type of nonvolatile memory. This memory has many advantages, such as high-speed, low power consumption, simple structure, high-density integration, etc. Therefore, it has a strong potential to replace DRAM. This paper summarizes the recent progress of the studies on RRAM. Although the achievement obtained has been summarized, there is still a long way from the real application. We also discuss the principle and related properties of RRAM and forecast the preparation trends of RRAM

Abstract: This paper summarized the improving processes, such as, microstructure and surface modifications, appropriate dopants and nanostructural forms, to obtain sensitive, fast, and enhanced ultraviolet (UV) photoresponse in ZnO thin films. Furthermore, recent research progress in this field and some development features in future are also briefly analyzed.

Abstract: A simple solar-blind ultraviolet (UV) detector was fabricated by using Al0.3Zn0.7O alloy thin films as photocathode and ZnO:Al (AZO) thin film as transparent electrode. Transmission spectra of Al0.3Zn0.7O alloy thin film was characterized through spectrometer and result showed significant enlargement of its optical band gap value. This alloy film only absorbed illumination whose wavelength is below 280nm, and the UV on/off characteristics of this detector presented very clearly. Scanning electron microscope (SEM) image revealed fine structure of both layers and the interface of these two layers performed clear and uniform.

Abstract: Large area (13mm*13mm) PbS thin films with (200) preferred orientation were prepared by chemical deposition. The optical properties of PbS films with annealing treatment in various forming gases with different ratio of nitrogen-oxygen (100ml/min of N₂&O₂(3:1), 100ml/min of N₂&O₂(2:1), 100ml/min of N₂&O₂(1:1), 50ml/min of O₂) were deeply analyzed. X-ray diffraction (XRD), scanning electron microscope (SEM), high and low temperature test chamber and other test methods for photosensitivity were used to investigate the structure and photoelectric properties of PbS films. The results showed that with proper amount of oxidation (when nitrogen-oxygen ratio was 1:1), the impurity barrier tended to fully grow, impurity activation energy increased to 0.314eV, dark resistance reached up to 30.2MΩ, and the photoconductive sensitivity of PbS thin film under this process was about 4 times larger compared with air annealing. According to the analysis of XRD patterns and surface morphologies of films, it can be seen that nitrogen in this process was not only to prevent PbS thin films from excessive oxidation, but also inhibited the formation of surface defects and enhanced the stability of PbS device.