Papers by Author: Hua Sheng Pu

Abstract: In this paper, conducting polypyrrole (PPy) films doped with p-toluene solfonate (pTS) was electrochemically synthesized. The chemical groups of the sample were analysed by FT-IR, an in situ nanotribolab system together with the four-probe instrument were employed to investigate the mechanical and conductivity of the prepared films. The surface morphology was studied by scanning electron microscopy (SEM). It demonstrates that the dopant anion was doped into the PPy while the overoxidation did not occur during the polymerization. The conductivity of PPy film is stable, during indentation, different loads were applied and hardness, elastic modulus were obtained. SEM images showed that the film is uniform. The characteristic microstructure of polypyrrole, the cauliflower-like, is appeared and the film is compact and homogeneous.

Abstract: Hydrogenated nanocrystalline silicon (nc-Si:H) films were deposited on glass substrates using Radio frequency plasma-enhanced chemical vapor deposition(RF-PECVD)from a B2H6/SiH4/H2 gas mixtures. In this paper, we mainly changed the Borane-Silane flow rate ratio (β), while other parameters were kept constant. Raman spectrum and X-ray diffraction were employed to investigate the micro-structure of the films, and the indentations were used to measure the mechanical characters (the Young’s modulus (E) and hardness (H)). The Raman spectrum showed that, withβincreasing the crystalline fraction decreased, which indicated that more boron doped might not be propitious to the formation of crystalline of the thin films. XRD spectrum revealed that the films have a remarkably preferential orientation. The analysis of the Young’s modulus and hardness by TriboIndenter nano system suggested that the increase inβhad concernful effects in the decrease of E and H values, so we can control the mechanical characters of the thin films by means of changing the doped concentrations. In view of these results, it may be concluded that the use of lowβconditions might lead to growth of nc-Si:H films with high crystallinity, and as well high Young’s modulus and hardness.