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Articles by author: Hun Jae Chung

• Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates
  Published in: Silicon Carbide and Related Materials 2005 (p613)
• Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2005 (p497)
• Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2005 (p625)
• Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC
  Published in: Silicon Carbide and Related Materials 2005 (p27)
• Growth of Bulk SiC by Halide Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2003 (p87)
• Halide-CVD Growth of Bulk SiC Crystals
  Published in: Silicon Carbide and Related Materials 2005 (p21)
• Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2006 (p473)
• Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes
  Published in: Silicon Carbide and Related Materials 2005 (p547)
• Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing
  Published in: Silicon Carbide and Related Materials - 2002 (p253)