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Articles by author: I.V. Antonova

• A Study of the Conversion of the VO to the VO₂ Defect in Heat-Treated Silicon under Stress
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p249)
• Anisotropic Strain – Anisotropic Heating Engineering for Silicon Nanocrystals in SiO₂
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p523)
• Confinement Levels in Passivated SiGe/Si Quantum Well Structures
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p541)
• Effect of External Stress Applied during Annealing on Hydrogen- and Oxygen-Implanted Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p345)
• Formation of Shallow Donors in Stress-Annealed Silicon Implanted with High-Energy Ions
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p243)
• Gettering of Impurities in Hydrogen Implanted Nitrogen-Doped Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p565)
• Hydrogen-Induced Shallow Donors in Silicon and Silicon-on-Insulator Structures Formed by Hydrogen Slicing
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p497)
• Hydrogen-Related Phenomena in SOI Fabricated by Using H⁺-Ion Implantation
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p491)
• Hydrostatic Pressure Effect on Redistribution of Oxygen Atoms in Oxygen-Implanted Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p115)
• IR Studies on the Interaction between Thermal and Radiation Defects in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p351)
• Modification of Silicon Nanocrystals Embedded in an Oxide by High Energy Ion Implantation
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p541)
• Oxygen Precipitate Nucleation Process in Silicon with Different Oxygen Concentration and Structural Perfection
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p161)
• Passivation of Si and SiGe/Si Structures with 1-Octadecene Monolayers
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p83)
• Pressure-Assisted Lateral Nanostructuring of the Epitaxial Silicon Layers with SiGe Quantum Wells
  Published in: High Pressure Technology of Nanomaterials (p291)
• Properties of Silicon Film in a Silicon-on-Glass Structure
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p503)