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Articles by author: Il Soo Kim

• An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method
  Published in: Silicon Carbide and Related Materials 2006 (p9)
• Effect of Microstructural Variables on the Erosion of Silicon Nitride Ceramics
  Published in: Advanced Ceramics and Composites (p259)
• Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method
  Published in: Silicon Carbide and Related Materials 2010 (p44)
• Fabrication of Carbon Fiber/SiSiC Composites and Their Mechanical Properties
  Published in: High Temperature Ceramic Matrix Composites III (p19)
• GaN Epitaxial Growth on Sapphire Substrate with Al Buffer Layer Prepared by E-Beam Evaporation
  Published in: Silicon Carbide and Related Materials 2008 (p935)
• High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design
  Published in: Silicon Carbide and Related Materials 2005 (p83)
• Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method
  Published in: Silicon Carbide and Related Materials 2006 (p25)
• Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method
  Published in: Silicon Carbide and Related Materials 2008 (p7)
• Non-Polar SiC Crystal Growth with m-Plane(1-100) and a-Plane(11-20) by PVT Method
  Published in: Silicon Carbide and Related Materials 2009 (p37)
• SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design
  Published in: Silicon Carbide and Related Materials 2004 (p47)
• The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method
  Published in: Silicon Carbide and Related Materials 2010 (p40)