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Articles by author: Irina G. Galben-Sandulache

• Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts
  Published in: Silicon Carbide and Related Materials 2009 (p59)
• Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals
  Published in: Silicon Carbide and Related Materials 2009 (p63)
• Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT
  Published in: Silicon Carbide and Related Materials 2008 (p45)
• On the Stability of 3C-SiC Single Crystals at High Temperatures
  Published in: Silicon Carbide and Related Materials 2011 (p493)
• Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique
  Published in: Silicon Carbide and Related Materials 2010 (p169)
• Optical Investigation of Electronic Properties in Bulk and Surface Region of Sublimation-Grown 3C-SiC Crystals
  Published in: Silicon Carbide and Related Materials 2008 (p303)
• Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique
  Published in: Silicon Carbide and Related Materials 2010 (p20)
• Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique
  Published in: Silicon Carbide and Related Materials 2009 (p55)
• TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds
  Published in: Silicon Carbide and Related Materials 2009 (p383)