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Articles by author: Isaho Kamata

• 4H-SiC Epitaxial Growth for High-Power Devices
  Published in: Silicon Carbide and Related Materials - 2002 (p131)
• 8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation
  Published in: Silicon Carbide and Related Materials 2004 (p969)
• A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes
  Published in: Silicon Carbide and Related Materials 2001 (p1137)
• Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements
  Published in: Silicon Carbide and Related Materials 2001 (p1141)
• Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties
  Published in: Silicon Carbide and Related Materials 2003 (p1085)
• Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate
  Published in: Silicon Carbide and Related Materials 2000 (p131)
• Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers
  Published in: Silicon Carbide and Related Materials 2009 (p303)
• Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films
  Published in: Silicon Carbide and Related Materials 2001 (p323)
• Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes
  Published in: Silicon Carbide and Related Materials 2005 (p927)
• Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy
  Published in: Silicon Carbide and Related Materials 2005 (p231)
• Conditions for Micropipe Dissociation by 4H-SiC CVD Growth
  Published in: Silicon Carbide and Related Materials - 2002 (p261)
• Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p489)
• Dependence of Micropipe Dissociation on Surface Orientation
  Published in: Silicon Carbide and Related Materials 2003 (p379)
• Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient
  Published in: Silicon Carbide and Related Materials 2006 (p81)
• Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2005 (p415)