Papers by Author: J. Radovanović

Abstract: In this paper we have analyzed the possibility of enhancing spin-polarization performance of conventional nonmagnetic semiconductor heterostructures which rely on the resonant tunneling mechanism. Both the bulk inversion asymmetry (BIA) and the structural inversion asymmetry (SIA) effects are taken into account in the presented model. The aim is to engineer nanostructures with maximal degree of spin separation in the electron tunneling current, which might be useful in studying various spin-related phenomena in semiconductor materials. Spin-polarization status of the current, in the devices under consideration, should be controllable by moderate emitter-collector voltages. Additionally, the spin orbit-interactions affect the dwell times of electrons in spin-up and spin-down states, therefore the prospects of spin-filtering in the time domain may be considered as well.

Abstract: We have analyzed the spin-filtering effects of the electron current in asymmetric ZnSe/Zn1-xMnxSe multilayer structures, under the influence of both an external magnetic field and a bias voltage. In this type of semiconductor systems, conduction band electrons interact with 3d electrons of the magnetic Mn2+ ions. Because of this sp-d exchange interaction, an external magnetic field modulates the effective potential profile seen by spin-up and spin-down electrons, giving rise to a large Zeeman effect. It is found that the degree of spin polarization changes significantly when the electrical bias is switched from forward to reverse, thus the proposed structure displays obvious behavior of spin-filter diode. This originates from the effective “lifting” of the potential for spin-up electrons, which tunnel through actual potential barriers. Structural parameters optimization, with the goal of maximizing the spin-filtering coefficient, was performed by using simulated annealing algorithm. The described effect may be important for designing new tunable spin-based multifunctional semiconductor devices.

Abstract: An experimental and theoretical comparative analysis of the output characteristics of λ ≈ 9m GaAs/Al0.45Ga0.55As quantum cascade lasers based on single and double phonon resonance depopulation mechanisms were presented. The layer structures were grown with solid source molecular beam epitaxy and consist of 48 or 36 active stages embedded in a symmetrical plasmon enhanced waveguide. From the wafers, ridge waveguide lasers were fabricated by optical lithography and dry etching. The theoretical model is based on a fully non-equilibrium Schrödinger- Poisson self-consistent analysis of the coupled scattering rate and single-temperature energy balance equations, taking all relevant electron-LO phonon, electron-electron and electron-ionised impurity scattering processes into account. Single phonon resonance devices exhibit clear current saturation, simultaneously with a decrease of the optical power. In the moderate doping regime, a quasi-linear dependence of both the threshold and saturation current densities on injector doping, were measured, in a very good agreement with theoretical predictions. Double phonon resonance lasers exhibit ‘saturation’ mechanism evident from their decrease in optical power, but without pronounced current saturation. Previously reported saturation of the ‘maximal’ current under higher injector doping in single phonon resonance lasers, is also observed in the double phonon resonance structure for injector sheet doping above 8x1011cm-2.

Abstract: The optical gain in the active region of quantum cascade laser in an external magnetic field is analyzed. When the magnetic field is applied in the direction perpendicular to the plane of the layers, electron dispersion is broken into series of discrete Landau levels. This additional confinement strongly modifies the lifetime of electrons in the upper state of the laser transition, which is controlled by electron-phonon scattering. Landau levels are magnetically tuneable and, depending on their configuration, phonon emission is either inhibited or resonantly enhanced. This translates into a strong modulation of the population inversion, and consequently of the optical gain by varying the magnetic field. Numerical results are presented for a structure previously considered by Smirnov et al. [Phys. Rev B 66 (2002) 125317] which is designed to emit radiation at λ~11.4µm, with the magnetic field varied in the range 10-60T. The effects of band nonparabolicity are taken into account in this model.