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Articles by author: J. Stoemenos

• A Thermal Model for Flash Lamp Annealing of 3C-SiC/Si Multi-Layer Systems (i-FLASiC)
  Published in: Silicon Carbide and Related Materials 2004 (p217)
• Behavior of Micropipes during Growth in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p395)
• Bulk and Interface States in Polycrystalline Silicon Thin Film Transistors
  Published in: Polycrystalline Semiconductors III (p577)
• Characteristics of Planar Defects in Shallow Trenches Related to the Presence of Micropipes
  Published in: Silicon Carbide and Related Materials - 2002 (p277)
• Characterization of the Interface Ta/GaAs in Schottky Barrier Structures Prepared by Low Energy RF Sputtering with X-Ray Photoemission, TEM and Optical Transmittance Measurements
  Published in: Intergranular and Interphase Boundaries in Materials (p463)
• Comparative Evaluation of Free-Standing 3C-SiC Crystals
  Published in: Silicon Carbide and Related Materials 2004 (p229)
• Consequences of High-Dose, High Temperature Al⁺ Implantation in 6H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p881)
• Defect Characterization of Homo-Epitaxially Grown 6H-SiC on (0001) Silicon and (000-1) Carbon Faces
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p409)
• Dependence of Wet Oxidation on the Defect Density in 3C-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p663)
• Effect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100)
  Published in: Silicon Carbide and Related Materials 2005 (p1563)
• Epitaxial SiC Formation at the SiO₂/Si Interface by C⁺ Implantation into SiO₂ and Subsequent Annealing
  Published in: Silicon Carbide and Related Materials 2004 (p233)
• Flash Lamp Supported Deposition of 3C-SiC (FLASiC) – a Promising Technique to Produce High Quality Cubic SiC Layers
  Published in: Silicon Carbide and Related Materials 2003 (p175)
• Formation of 3C-SiC Films Embedded in SiO₂ by Sacrificial Oxidation
  Published in: Silicon Carbide and Related Materials 2003 (p1515)
• Formation of Precipitates in 6H-SiC after Oxygen Implantation and Subsequent Annealing
  Published in: Silicon Carbide and Related Materials - 1999 (p961)
• Grain Boundary Location Control by Patterned Metal Film in Excimer Laser Crystallized Polysilicon
  Published in: Polycrystalline Semiconductors V (p175)