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Articles by author: Jawad Hassan

• 3.3 kV-10A 4H-SiC PiN Diodes
  Published in: Silicon Carbide and Related Materials 2007 (p991)
• 4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate
  Published in: Silicon Carbide and Related Materials 2006 (p53)
• CVD of 6H-SiC on Non-Basal Quasi Polar Faces
  Published in: Silicon Carbide and Related Materials 2006 (p73)
• Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2006 (p97)
• Growth and Properties of SiC On-Axis Homoepitaxial Layers
  Published in: Silicon Carbide and Related Materials 2009 (p83)
• High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC
  Published in: Silicon Carbide and Related Materials 2010 (p115)
• Influence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping
  Published in: Silicon Carbide and Related Materials 2008 (p255)
• Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications
  Published in: HeteroSiC & WASMPE 2011 (p164)
• Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique
  Published in: Silicon Carbide and Related Materials 2008 (p703)
• On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for High Power Applications
  Published in: Silicon Carbide and Related Materials 2008 (p133)
• Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2009 (p307)
• Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC
  Published in: Silicon Carbide and Related Materials 2010 (p205)
• Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2009 (p327)
• Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2008 (p263)
• Thick Epilayer for Power Devices
  Published in: Silicon Carbide and Related Materials 2006 (p47)