Papers by Author: Ji Zhong Zhang

Abstract: Various deposits of CdO grains were observed on the surface of N 100 silicon crystals heated at 580 °C and 620 °C for 1 hour in an evaporation-deposition device, respectively. The ball-shaped crystals, and regular-prism-shaped crystals were found on top of bush-like long crystals. Two types of CdO self-organization aggregates were also observed, that is, regular circular-shaped dense aggregate and long-chainshaped aggregate. The self-organization aggregates were composed of numerous submicron CdO grains. The relationship between self-organization aggregates and surface defects of virgin N 100 silicon crystal was investigated. The results showed that the CdO self-organization aggregates were related to surface defects of the virgin N 100 silicon crystal, and a defect induced aggregation (DIA) model is suggested.

Abstract: 95% Al2O3 ceramics and Si <100> crystal were implanted by Ti ion in a MEVVA implanter. The influence of implantation parameters was studied by varying ion fluence. The samples were implanted by 80 keV Ti ion with fluences from 1 x1015 to 1 x 1018 ions/cm2, respectively. The samples were investigated by SEM, SAM, and four-probe measurement. Differentmorphologies were observed on the surfaces of the samples due to irradiation damage, and clearly related to implantation parameters. XRD spectra confirm formation of titanium silicides on the surfaces of Si samples with ion fluences equal to or high than 1x1015 ions/cm2. The experimental results suggest that it is possible to synthesise titanium silicides by using a MEVVA implanter.