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Articles by author: Jian H. Zhao

• 1,530V, 17.5mΩcm² Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization
  Published in: Silicon Carbide and Related Materials 2003 (p1157)
• 10 kV, 87 mΩcm² Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors
  Published in: Silicon Carbide and Related Materials 2005 (p1187)
• 1600 V, 5.1 mΩ●cm² 4H-SiC BJT with a High Current Gain of β=70
  Published in: Silicon Carbide and Related Materials 2007 (p1155)
• 1836 V, 4.7 mΩ•cm² High Power 4H-SiC Bipolar Junction Transistor
  Published in: Silicon Carbide and Related Materials 2005 (p1417)
• 2.5KV-30A Inductively Loaded Half-Bridge Inverter Switching using 4H-SiC MPS Free-Wheeling Diodes
  Published in: Silicon Carbide and Related Materials 2003 (p1097)
• 4,308V, 20.9 mΩ-cm² 4H-SiC MPS Diodes Based on a 30μm Drift Layer
  Published in: Silicon Carbide and Related Materials 2003 (p1109)
• 4,340V, 40 mΩcm² Normally-Off 4H-SiC VJFET
  Published in: Silicon Carbide and Related Materials 2003 (p1161)
• 4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile
  Published in: Silicon Carbide and Related Materials 2008 (p829)
• 4H-SiC MPS Diode Fabrication and Characterization in an Inductively Loaded Half-Bridge Inverter up to 100 kW
  Published in: Silicon Carbide and Related Materials 2001 (p1177)
• 4H-SiC Single Photon Avalanche Diode for 280nm UV Applications
  Published in: Silicon Carbide and Related Materials 2007 (p1203)
• 5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application
  Published in: Silicon Carbide and Related Materials 2007 (p947)
• 6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs
  Published in: Silicon Carbide and Related Materials 2003 (p1213)
• A 500V, Very High Current Gain (β=1517) 4H-SiC Bipolar Darlington Transistor
  Published in: Silicon Carbide and Related Materials 2003 (p1165)
• A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer
  Published in: Silicon Carbide and Related Materials 2003 (p1173)
• A High Voltage (1570V) 4H-SiC Bipolar Darlington with Current Gain β>640 and Tested in a Half-Bridge Inverter up to 20A at V_Bus=900V
  Published in: Silicon Carbide and Related Materials 2003 (p1169)