Papers by Author: João Bessa Sousa

Abstract: In this work, a study of the sensitivity enhancement of spin valve sensors, when located in close proximity to magnetic flux guides, is presented. The magnetoresistance (MR) of spin-valve sensors, lithographically patterned into stripes with lateral dimensions, (length) l = 500 µm, (width) wsensor = 1, 2, 6 µm and placed near one/two Co93.5Zr2.8Nb3.7 (CZN) magnetic flux guide, is characterized at room temperature. CZN has a high permeability that together with a defined microstructured shape, is able to concentrate the magnetic flux in a small area, leading to an increase in sensor's sensitivity. The magnetic field amplification is estimated by comparison of sensor sensitivity with/without magnetic flux guides, in the linear operation range, and studied as a function of different parameters. Besides an enhancement in sensitivity, sensors also exhibit an important increase in the hard axis coercivity and a shift from MR(H=0) = 0.5, both attributed to the magnetic flux guides. Amplification factors of the order of 20 are observed..

Abstract: Thin film nanocomposites of cobalt ferrite (CoFe2O4) dispersed in barium titanate (BaTiO3) matrix, have been deposited with different cobalt ferrite concentrations (from 20% to 70% CoFe2O4), as well as pure barium titanate and cobalt ferrite thin films (end members). The films were prepared by pulsed laser ablation on platinum covered Si(001) substrates. The films structure was studied by X-ray diffraction and their surface was examined by scanning electron microscopy (SEM). The magnetic properties were measured in a SQUID magnetometer. The results show that the deposited films are polycrystalline with a slight (111) barium titanate phase orientation and (311) CoFe2O4 phase orientation. The grain sizes measured from the X-ray diffraction peak widths, for both phases, are in the range 40nm to 100nm. However, as the concentration of the cobalt ferrite increases, the grain size of the BaTiO3 phase decreases, from 100nm to 30nm, up to 40% CoFe2O4 concentration beyond which the BaTiO3 grain size has an approximately constant value near 30nm. On the other hand the cobalt ferrite grain size does not show a clear trend with increasing cobalt ferrite concentration, fluctuating in the range 20nm to 30nm. The magnetic measurements show an increase of the magnetic moment from the low concentration region where the magnetic grains are more isolated and their magnetic interaction is small, towards the bulk value at higher CoFe2O4 concentrations. Also, a strong reduction of the magnetization with increasing temperature was observed, due to the corresponding decrease of the magnetocristalline anisotropy of the cobalt ferrite.

Abstract: A MOKE magnetometry unit simultaneously sensitive to both in-plane magnetization components, based on an intensity differential detection method, allows us to observe the uniaxial anisotropy impressed during CoFe-deposition and to discriminate the magnetization processes under a magnetic field parallel and perpendicular to such axes. Our MOKE imaging unit, using a CCD camera for Kerr effect domain visualization provides direct evidence on the dominant M-processes, namely domain wall motion and moment rotation. Further magnetic information was obtained by AMR measurements due to the dependence of the electrical resistivity on the short-range spin disorder and also on the angle between the electrical current direction (I) and the spontaneous magnetization (MS).

Abstract: Bulk MgB2 samples were synthesized by hot isostatic pressing under pressures up to 200MPa at 950°C. In these conditions, full densification of samples was obtained (~98% of theoretical density). SEM, EDS and XRD analysis on final dense bodies were used to evaluate samples, and show increasingly better control over the amounts of secondary MgO (down to ~10%) and complete prevention of formation of MgB4 by using simple glass encapsulation techniques and addition of Mg(s) to the capsule. The samples display superconducting properties, including a narrow critical transition in electrical properties (Tc ~36-38K). Magnetic studies were performed, allowing the determination of the superconducting fraction and critical current density Jc of the materials. Contrary to the Tc, the Jc is quite sensitive to the processing and microstructure and values from 0.3 to 0.6x106 A/cm2 are obtained at 10K. The reduction of Jc with the applied magnetic field requires further improvements to reduce weak links.

Abstract: To commute between the different resistance states of a magnetic tunnel junction (TJ) one can use a thermally-induced pinned layer switching mechanism. When a sufficiently high electrical current flows through the insulating barrier, local temperatures inside the tunnel junction can increase above the blocking temperature of the antiferromagnetic layer used to pin the magnetization of the adjacent ferromagnet. Then, it is possible to switch the magnetization of the pinned layer with a small magnetic field H and thus revert the magnetic state of the TJ. Here we demonstrate thermally-induced pinned layer switching in thin magnetic tunnel junctions. We further present numerical results that suggest that heating is small when one takes into consideration the uniform current density flowing through the tunnel junction and that one must conclude that nanoconstrictions concentrate most of the current, increasing local current densities and temperature. Simulation of heating and cooling times demonstrates that current-induced pinned layer switching is a competitive mechanism for actual technological applications.

Abstract: We measured dilute Gd1-xYx single crystals (x < 0.1) samples using an a.c. magnetoresistance technique. This technique consists in applying a constant current to the sample and measuring the temperature dependent a.c. voltage under a time modulated external magnetic field (f = 333 Hz). The a.c. voltage signal is decomposed in real and imaginary components or, alternatively, in amplitude and phase signals relative to the a.c. magnetic field. This technique proved to be extremely sensitive and effective to display all the magnetic phase transitions revealed by the previous d.c. transport measurements, plus an additional spectrum of other critical features.

Abstract: The materials used in microwave oven cavities must have specific dielectric properties in order to maintain the efficiency of the food heating. Plastics, by their mechanical and chemical properties and low cost, are one of those potential materials. In this study, we present the results of the measurements of complex dielectric constant, ´´ ´ * e e e í − = , in the microwave frequency region, on different plastics: polyoxymethylene (POM), polypropylene (PP) and polybutylene terephtalate (PBT), using the cavity resonant method. We measure the shift in the resonant frequency of the cavity, Df, caused by the insertion of the sample, which can be related to the real part of the complex permitivitty, e´, while the change in the inverse of the quality factor of the cavity, D(1/Q), gives the imaginary part, e´´. The relations are simple when we consider only the first order perturbation in the electric field caused by the sample.