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Articles by author: Jochen Friedrich

• 4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions
  Published in: Silicon Carbide and Related Materials 2010 (p55)
• A Combined Numerical and Experimental Study of the Effects of Controlled Fluid Flow on Alloy Solidification
  Published in: Aluminium Alloys 2006 - ICAA10 (p1753)
• Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p299)
• Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS
  Published in: Silicon Carbide and Related Materials 2008 (p393)
• Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2007 (p143)
• Simulation of ESA's msl Furnace Inserts and Sample-Cartridge Assemblies Using the Thermal Modeling Tool Crysvun
  Published in: Solidification and Gravity IV (p151)