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Articles by author: Johann Martin Spaeth

• Observation of Persistent Electron Capture in N-Type Gallium Arsenide Studied by Optically Detected Magnetic Resonance
  Published in: Defects in Semiconductors 19 (p1015)
• ODMR Investigation of Proton Irradiated GaAs
  Published in: Defects in Semiconductors 19 (p1021)
• ODMR Investigations of Ge Acceptors in p-Type Al_0.4Ga_0.6As
  Published in: Defects in Semiconductors 19 (p1315)
• ODMR of Triplet States of Self-Trapped Excitons in Li₂GeO₃ Crystals
  Published in: Defects in Insulating Materials (p577)
• On the Microscopic Structures of Three Different Arsenic Antisite-Related Defects in Gallium Arsenide Studied by Optically Detected Electron Nuclear Double Resonance
  Published in: Defects in Semiconductors 17 (p217)
• Optical, Magneto-Optical and Magnetic Resonance Studies of Electrons Trapped by OH^- Defects in Alkali Halides
  Published in: Defects in Insulating Materials (p461)
• Radiation-Induced Pair Defects in 6H-SiC Studied by Optically Detected Magnetic Resonance
  Published in: Silicon Carbide and Related Materials 2000 (p505)
• The Arsenic Antisite Defect in GaAs and Its Relation to EL2
  Published in: Defects in Semiconductors 14 (p311)
• The Isolated Arsenic Antisite Defect and EL2 - An ODMR Investigation of Electron Irradiated Galliumarsenide
  Published in: Defects in Semiconductors 16 (p887)
• The Structure of Au-Li and Pt-Li Complexes in Silicon
  Published in: Defects in Semiconductors 17 (p1173)
• The V_SiC_Si(Si_CC_Si) Complex in Electron-Irradiated 6H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p477)
• Time-Resolved ODMR Measurements on the 'Yellow Luminescence' in MOCVD-Grown GaN Films
  Published in: Defects in Semiconductors 18 (p37)