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Articles by author: Johji Nishio

• Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)
  Published in: Silicon Carbide and Related Materials 2008 (p655)
• Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
  Published in: Silicon Carbide and Related Materials 2001 (p195)
• Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure
  Published in: Silicon Carbide and Related Materials 2004 (p147)
• Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties
  Published in: Silicon Carbide and Related Materials 2005 (p1175)
• High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
  Published in: Silicon Carbide and Related Materials 2001 (p179)
• Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face
  Published in: Silicon Carbide and Related Materials - 2002 (p925)
• Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2001 (p215)
• Optimization of a SiC Super-SBD Based on Scaling Properties of Power Devices
  Published in: Silicon Carbide and Related Materials 2005 (p1179)
• Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)
  Published in: Silicon Carbide and Related Materials 2004 (p921)
• Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
  Published in: Silicon Carbide and Related Materials 2001 (p447)
• SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p887)
• Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor
  Published in: Silicon Carbide and Related Materials 2001 (p227)
• Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)
  Published in: Silicon Carbide and Related Materials 2006 (p881)
• The Role of Point Defects in Non-Stoichiometric III-V Compounds
  Published in: Defects in Semiconductors 18 (p189)