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Articles by author: Jun Suda

• 1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face
  Published in: Silicon Carbide and Related Materials 2008 (p757)
• 4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET)
  Published in: Silicon Carbide and Related Materials 2003 (p1409)
• Accurate Measurements of Second-Order Nonlinear-Optical Coefficients of Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2008 (p315)
• Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes
  Published in: Silicon Carbide and Related Materials 2007 (p995)
• Brazing of CP-Titanium / CP-Titanium and Titanium Alloy / Stainless Steel with Laminated Ti-Based Filler Metal
  Published in: THERMEC 2006 (p4031)
• Defect Control in Growth and Processing of 4H-SiC for Power Device Applications
  Published in: Silicon Carbide and Related Materials 2009 (p645)
• Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals
  Published in: Silicon Carbide and Related Materials 2011 (p481)
• Dose Designing for High-Voltage 4H-SiC RESURF MOSFETs - Device Simulation and Fabrication
  Published in: Silicon Carbide and Related Materials 2004 (p809)
• Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices
  Published in: Silicon Carbide and Related Materials 2009 (p825)
• Electron Injection from GaN to SiC and Fabrication of GaN/SiC Heterojunction Bipolar Transistors
  Published in: Silicon Carbide and Related Materials 2005 (p1545)
• Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model
  Published in: Silicon Carbide and Related Materials 2011 (p241)
• Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO₂ Stack Gate Structures
  Published in: Silicon Carbide and Related Materials 2007 (p679)
• Enhanced Current Gain (>250) in 4H-SiC Bipolar Junction Transistors by a Deep-Level-Reduction Process
  Published in: Silicon Carbide and Related Materials 2011 (p1117)
• Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes
  Published in: Silicon Carbide and Related Materials 2011 (p973)
• Heteroepitaxial Growth of Insulating AlN on 6H-SiC by MBE
  Published in: Silicon Carbide and Related Materials 2001 (p1457)