HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Kazutoshi Kojima

• 2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method
  Published in: Silicon Carbide and Related Materials 2004 (p93)
• 4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2003 (p209)
• 4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate
  Published in: Silicon Carbide and Related Materials 2009 (p99)
• 4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm²/Vs
  Published in: Silicon Carbide and Related Materials 2003 (p1417)
• A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H₂ and H₂O Vapor Atmosphere Post-Oxidation Annealing
  Published in: Silicon Carbide and Related Materials 2001 (p1057)
• A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
  Published in: Silicon Carbide and Related Materials 2003 (p1269)
• Challenges of High-Performance and High-Reliablity in SiC MOS Structures
  Published in: Silicon Carbide and Related Materials 2011 (p703)
• Characterization of Au Schottky Contacts on p-Type 3C-SiC Gown by Low Pressure Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials - 1999 (p1239)
• Charge Collection Efficiency of 6H-SiC P⁺N Diodes Degraded by Low-Energy Electron Irradiation
  Published in: Silicon Carbide and Related Materials 2009 (p921)
• Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates
  Published in: Silicon Carbide and Related Materials 2000 (p135)
• Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth
  Published in: Silicon Carbide and Related Materials 2008 (p113)
• Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals
  Published in: Silicon Carbide and Related Materials 2004 (p315)
• Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection Efficiency
  Published in: Silicon Carbide and Related Materials 2011 (p267)
• Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2001 (p851)
• Effect of Additional Silane on In Situ H₂ Etching prior to 4H-SiC Homoepitaxial Growth
  Published in: Silicon Carbide and Related Materials 2006 (p85)