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Articles by author: Kinga Kościewicz

• Characterization of Vanadium Doped 4H- and 6H-SiC Grown by PVT Method Using the Open Seed Backside
  Published in: Silicon Carbide and Related Materials 2009 (p21)
• Comparison between Polishing Etching of On and Off-Axis C and Si-Faces of 4H-SiC Wafers
  Published in: Silicon Carbide and Related Materials 2008 (p597)
• Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers
  Published in: Silicon Carbide and Related Materials 2007 (p155)
• Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates – Defects Analysis and Reduction
  Published in: Silicon Carbide and Related Materials 2010 (p95)
• Growth of 4H-SiC Crystals on the 8° Off-Axis 6H-SiC Seed by PVT Method
  Published in: Silicon Carbide and Related Materials 2009 (p17)
• Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method
  Published in: Silicon Carbide and Related Materials 2008 (p15)
• Growth of Graphene Layers on Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2008 (p199)
• Growth Rate and Thickness Uniformity of Epitaxial Graphene
  Published in: Silicon Carbide and Related Materials 2009 (p569)
• Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction
  Published in: Silicon Carbide and Related Materials 2009 (p251)
• Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut
  Published in: Silicon Carbide and Related Materials 2008 (p939)