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Articles by author: Koji Nakayama

• 8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation
  Published in: Silicon Carbide and Related Materials 2004 (p969)
• Behavior of Stacking Faults in TEDREC Phenomena for 4.5 kV SiCGT
  Published in: Silicon Carbide and Related Materials 2007 (p1175)
• Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy
  Published in: Silicon Carbide and Related Materials 2005 (p231)
• Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode
  Published in: Silicon Carbide and Related Materials 2010 (p535)
• Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging
  Published in: Silicon Carbide and Related Materials 2006 (p251)
• Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation
  Published in: Silicon Carbide and Related Materials 2005 (p1359)
• Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation
  Published in: Silicon Carbide and Related Materials 2011 (p989)
• Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters
  Published in: Silicon Carbide and Related Materials 2007 (p1179)
• Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
  Published in: Silicon Carbide and Related Materials 2004 (p97)
• Lifetime Control of 4.5 kV SiCGT by High-Energy Electron Irradiation
  Published in: Silicon Carbide and Related Materials 2010 (p718)
• Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm²
  Published in: Silicon Carbide and Related Materials 2007 (p1015)
• Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping
  Published in: Silicon Carbide and Related Materials 2005 (p375)
• SiC Zener Diode for Gate Protection of 4.5 kV SiCGT
  Published in: Silicon Carbide and Related Materials 2010 (p559)
• Stress Distribution in 2in SiC Wafer Measured by Photoelastic Method
  Published in: Silicon Carbide and Related Materials 2001 (p403)
• The Development of 2in 6H-SiC Wafer with High Thermal-Conductivity
  Published in: Silicon Carbide and Related Materials 2001 (p51)