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Articles by author: L. Samuelson

• A Photoluminescence Study of the Charge State of a Donor Level in GaAs Induced by Hydrostatic Pressure
  Published in: Defects in Semiconductors 16 (p763)
• Characterization of GaN Quantum Dots on AlGaN/SiC Substrate Using Cathodoluminescence
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1335)
• Reduction of the Barrier Height and Enhancement of Tunneling Current of Titanium Contacts Using Embedded Au Nano-Particles on 4H and 6H Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2001 (p937)
• The Energy Position of the EL2 Ground State in GaAs
  Published in: Defects in Semiconductors 14 (p329)
• The Influence of Process-Induced Surface Defects on Luminescence and Transport Properties of Low-Dimensional Structures
  Published in: Defects in Semiconductors 17 (p1541)
• The Temperature Dependence of the Hole Ionization Cross Section of EL2 in GaAs
  Published in: Defects in Semiconductors 15 (p79)
• Transition-Metal Luminescence in III-V Alloys
  Published in: Defects in Semiconductors 14 (p615)