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Articles by author: Lin Cheng

• Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation
  Published in: Silicon Carbide and Related Materials 2003 (p885)
• Fast Switching (41 MHz), 2.5 mΩ•cm², High Current 4H-SiC VJFETs for High Power and High Temperature Applications
  Published in: Silicon Carbide and Related Materials 2005 (p1183)
• Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs
  Published in: Silicon Carbide and Related Materials 2004 (p885)
• High-Temperature Operation of 50 A (1600 A/cm²), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications
  Published in: Silicon Carbide and Related Materials 2007 (p1055)
• High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications
  Published in: Silicon Carbide and Related Materials 2007 (p1051)
• Mechanical Properties an Microstructural Characteristics of Carbon Fiber Reinforced Silicon Carbide Matrix Composites by Chemical Vapor Infiltration
  Published in: High Temperature Ceramic Matrix Composites III (p73)
• Popcorn Failure and Unstable Void Growth in Plastic Electronic Packages
  Published in: Modeling of Materials (p61)
• Preparation and Microstructure of Nextel 720/Mullite-Corundum Composite
  Published in: Composite Materials III (p25)
• Structure and Materials of a Multi-Layer Coating for the Oxidation Protection of C/C Composites up to 1700°C
  Published in: High Temperature Ceramic Matrix Composites III (p275)