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Articles by author: Lothar Frey

• 4H-SiC N-MOSFET Logic Circuits for High Temperature Operation
  Published in: Silicon Carbide and Related Materials 2010 (p734)
• Annealing of Aluminum Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing
  Published in: Silicon Carbide and Related Materials 2004 (p621)
• Barium, Strontium and Bismuth Contamination in CMOS Processes
  Published in: Ultra Clean Processing of Silicon Surfaces V (p9)
• Comparative Study on Metallization and Passivation Materials for High Temperature Sensor Applications
  Published in: Silicon Carbide and Related Materials 2010 (p449)
• Conversion Efficiency of Radiation Damage Profiles into Hydrogen-Related Donor Profiles
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p375)
• Extracting Activation and Compensation Ratio from Aluminum Implanted 4H-SiC by Modeling of Resistivity Measurements
  Published in: Silicon Carbide and Related Materials 2005 (p827)
• Impurity Conduction in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2006 (p367)
• Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC
  Published in: Silicon Carbide and Related Materials 2010 (p417)
• Investigation of Rapid Thermal Annealed pn-Junctions in SiC
  Published in: Silicon Carbide and Related Materials 2003 (p1073)
• Modeling of the Influence of Schottky Barrier Inhomogeneities on SiC Diode Characteristics
  Published in: Silicon Carbide and Related Materials 2003 (p973)
• Surface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p609)