Papers by Author: M. Celeste Carmo

Abstract: Monolayer (ML) thick Ge deposition on (100) Si substrates by molecular beam epitaxy (MBE) technique using an ultrathin SiO2 interlayer has been studied by ion beam analysis and photoluminescence (PL). The dependence of the Ge layer growth mode on the amount of the deposited Ge and the SiO2 thickness has been investigated. Atomic hydrogen treatment has been performed in order to passivate non-radiative recombination channels and to enhance the PL intensity. We conclude the formation of Ge quantum dots for the sample with the thickest Ge and SiO2 layers (9 Å and 1 ML, respectively).

Abstract: Ferromagnetism persisting above 375 K and anisotropic ferromagnetic resonance (FMR) spectra have been detected for the first time in Si co-implanted with Mn and As and annealed under appropriate conditions. For comparison, semi-insulating GaAs samples have been implanted with the same ions and subsequently annealed. They also exhibit ferromagnetism with a Curie temperature well in excess of 375 K. High-resolution transmission electron microscopy (TEM) performed on the samples with the best magnetic characteristics has shown the presence of nanoclusters due to the segregation of the implanted species in both Si and GaAs. The angular dependence of the FMR spectra also reveals the existence of magnetic clusters with the hard magnetization axis aligned along the four equivalent <111> crystal axes. The spectra are very similar in Si and GaAs, indicating that the clusters in both materials probably consist of hexagonal MnAs.