Papers by Author: M.J. Velgakis

Abstract: Nickel films are grown by radio frequency magnetron sputtering on Corning glass, polyimide foils and on the native oxide of Si (100) wafers at low (1x10^-3 mbar) and relatively high (2.5x10^-2 mbar) Argon pressure at 100 °C. The base pressure of the high vacuum chamber is 1x10^-7 mbar. X-ray diffraction experiments are performed to reveal the different texture of various Ni films. Magneto-optical Kerr effect hysteresis loops and magnetic force microscopy images show correlation between Argon pressure, texture and magnetic anisotropy of the films. The results are discussed with respect to relevant measurements of Ni/NiO magnetic multilayers prepared under similar experimental conditions.

Abstract: Cu and Ni from CuNi metallic targets (composition 20-80 and 46-54 at.%) are deposited on Corning glass, quartz and the native oxide of Si (100) wafers by direct current magnetron sputtering in a high vacuum chamber (base pressure 5 x 10^-5 mbar). The CuNi films, with thickness 40 200 nm, are post annealed at temperatures 400 - 500 °C in a furnace under atmospheric air in order to be fully oxidized. The structure of the films is studied by x-ray diffraction experiments. Phase separation of the oxides is evident. The optical properties are studied via ultraviolet-visible light absorption spectroscopy. The spectra of CuNi-oxide films are compared with the spectra of the pure CuO and NiO films. Features originating from both CuO and NiO are detected in the spectra of the CuNi-oxide thin films.

Abstract: . In this work, we present a simple method to fabricate high quality Ni/NiO multilayers with the use of a single magnetron sputtering head. Namely, at the end of the deposition of each single Ni layer, air is let to flow into the vacuum chamber through a leak valve. Then, a very thin NiO layer (~ 1nm) is formed by natural oxidation. The process is reproducible and the result is the formation of a multilayer with excellent layering. Magnetization hysteresis loops recorded at 5 K and room temperature reveal a tendency for perpendicular magnetic anisotropy as the thickness of the individual Ni layers decreases. It is shown that the Ni/NiO interface has sizeable positive surface/interface anisotropy, i.e. it favors the development of perpendicular magnetic anisotropy. This is rather unusual for a Ni-based multilayered system and may render Ni/NiO multilayers useful for magneto-optical recording applications.

Abstract: Thin Cu films of thickness 0.4 – 150 nm were deposited via radio frequency magnetron sputtering on Si(100) wafers, corning glass and quartz. Subsequently the Cu films were oxidized in ambient air at 230oC and 425oC in order to produce single-phase Cu2O and CuO, respectively. Selected samples were measured in the transmission geometry with the help of an ultraviolet – visible spectrophotometer. From the absorption spectra of the films, it was found that the gap EB for the dipole allowed transitions showed blue shifts of about 1.2 eV for the Cu2O thinnest film (0.75 nm), whereas the Edirect for the direct gap transitions showed blue shifts of about 0.16 eV for the CuO thinnest film (0.7 nm). The blue shift of the energy gap in the copper-oxide semiconductors is an indication of the presence of strong quantum confinement effects.