Papers by Author: M. Miljković

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Abstract: Multilayered BaTi1-xSnxO3 (BTS) ceramics with different Ti/Sn ratios were produced by pressing and sintering at 1420 oC for 2 hours. X-ray diffractometry, scanning electron microscopy and energy dispersive spectroscopy were used for structural, microstructural and elemental analysis, respectively. The dielectric and ferroelectric behavior of sintered samples was studied, too. It is found that in ingredient materials, with increasing Sn content, the tetragonality decreases; Curie temperature moves towards room temperature, while the maximum of the dielectric constant increases, and also, they becomes less hysteretic. It is noticed that multilayered BTS ceramics with different Ti/Sn contents have a broad transition temperature and show a relatively high dielectric constant in a wide temperature range. It is shown that dielectric properties of these materials may be modified by a combination of different BTS powders as well as layers number.
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Abstract: Nb/Mn and Dy/Mn codoped BaTiO3 specimens, prepared by conventional solid-state procedure, were investigated regarding their microstructural and dielectric properties. The powders were doped with Nb2O5 and Dy2O3 with an amount of 0.1, 0.5 and 1.0 at% of dopants ions. The MnO content of 0.05 at% Mn was the same in both types of samples. The specimens were sintered in air at 1320 and 1350 °C for two hours. Microstructural and compositional studies were done by SEM equipped with EDS. In low doped BaTiO3 the grain size is around 1-3 μm, while in ceramics with high dopant content (1.0 at%) the grain size distribution was in the range of 3-10 μm. High dielectric constant is associated with small-grained microstructure, being 5000 for Dy-doped and 6500 for Nb-doped BaTiO3 sintered at 1350 °C. The specimens with low dopant content demonstrate the Curie-Weiss behavior in a paraelectric regime. A nearly flat permittivity response with temperature was obtained for specimens with 0.5 and 1.0 at% Dy content. Loss tangents were in the range of 0.03 - 0.32.
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