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Articles by author: Marek Skowronski

• 4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer
  Published in: Silicon Carbide and Related Materials 2010 (p123)
• A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers
  Published in: Silicon Carbide and Related Materials 2001 (p443)
• Analysis of Sub-Surface Damage-Induced Threading Dislocations in Physical Vapor Transport Growth of 6H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p415)
• Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
  Published in: Silicon Carbide and Related Materials 2003 (p1113)
• Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2001 (p231)
• Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy
  Published in: Silicon Carbide and Related Materials - 2002 (p213)
• Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC Substrates
  Published in: Silicon Carbide and Related Materials 2003 (p805)
• Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates
  Published in: Silicon Carbide and Related Materials 2005 (p613)
• Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2005 (p497)
• Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2005 (p493)
• Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC
  Published in: Silicon Carbide and Related Materials 2007 (p385)
• Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices
  Published in: Silicon Carbide and Related Materials 2006 (p77)
• Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices
  Published in: Silicon Carbide and Related Materials 2004 (p155)
• Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2007 (p345)
• Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2010 (p63)