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Articles by author: Margareta K. Linnarsson

• A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond
  Published in: Silicon Carbide and Related Materials 2007 (p453)
• Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters
  Published in: Silicon Carbide and Related Materials 2001 (p203)
• Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p917)
• Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p365)
• Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance Microscopy
  Published in: Silicon Carbide and Related Materials 2001 (p663)
• Channeled Implants in 6H Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 1999 (p889)
• Correlation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p423)
• Damage Reduction in Channeled Ion Implanted 6H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p893)
• Deuterium Incorpoation in Acceptor Doped Epitaxial Layers of 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p761)
• Diffusion of Dopants and Impurities in Device Structures of SiC, SiGe and Si
  Published in: Diffusion in Materials DIMAT2000 (p597)
• Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p427)
• Doping of Silicon Carbide by Ion Implantation
  Published in: Silicon Carbide and Related Materials 2000 (p549)
• Electrical and Optical Properties of GaAs Doped with Li
  Published in: Defects in Semiconductors 16 (p985)
• Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen
  Published in: Silicon Carbide and Related Materials - 1999 (p933)
• Growth of δ-Doped SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2000 (p563)