Papers by Author: Maria Heidenblut

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Abstract: Driven by cost saving pressure and new regulations such as REACH, the imple¬mentation of cost efficient, EHS-friendly alternatives is in full swing. There is a clear trend in the plasma etch residue (PER) cleaning field to replace the currently used, expensive and harmful organic PER-removers by EHS-friendly aqueous alternatives. Striking advantages of fluorine free aqueous removal are reported1. The goals of present work -which was carried out in cooperation of BASF and Infineon-, was to examine the dependence of residue constitution on etch and strip conditions and to find a way to adapt also most critical cleaning challenges for EHS-friendly PER remover usage. For that reason a selected aluminum interconnect metal layer with difficult removable residues was chosen. XPS is well proved as an appropriate method for selective sidewall and top/bottom residue analysis2. Our analytical work was focused on defining fingerprints for the etch residues, concerning their elemental distribution, and tracking their changes during the different process steps and conditions.
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Abstract: The subject of this report is the characterization of plasma etch residues after a metal etch process with Cl2/BCl3 etch gases. One of the interactive factors in the removability of the residues is the photo-mask removal process (DSQ). Depending on the DSQ process the molecular structure of the residues will differ. For our findings, we used laser spectroscopy and Fourier-transformed infrared spectroscopy to obtain information about the degree of the cross-linking of the molecular structure of residues in a post-metal etch cleaning process. The post-etch cleaning is important for removing residues remaining after the metal structuring process. The main goal is to use emission spectroscopy for studying the compounds of the dry-etch related residues. Finally, it was shown that small variations in wafer treatment directly after dry-etching results in different solubilities of residues in HDA (hydroxylamine) based solutions. [1]
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