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Articles by author: Mark A. Fanton

• Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates
  Published in: Silicon Carbide and Related Materials 2007 (p389)
• Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2005 (p497)
• Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2005 (p625)
• Evaluating and Improving SIMS Method for Measuring Nitrogen in SiC
  Published in: Silicon Carbide and Related Materials 2005 (p617)
• Evolution of D₁-Defect Center in 4H-SiC during High Temperature Annealing
  Published in: Silicon Carbide and Related Materials 2007 (p429)
• Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC
  Published in: Silicon Carbide and Related Materials 2005 (p27)
• Growth of SiC Boules with Low Boron Concentration
  Published in: Silicon Carbide and Related Materials 2005 (p47)
• Halide-CVD Growth of Bulk SiC Crystals
  Published in: Silicon Carbide and Related Materials 2005 (p21)
• Hybrid Physical-Chemical Vapor Transport Growth of SiC Bulk Crystals
  Published in: Silicon Carbide and Related Materials 2005 (p103)
• Resistivity Distribution in Undoped 6H-SiC Boules and Wafers
  Published in: Silicon Carbide and Related Materials 2005 (p51)
• Thermal Evolution of Defects in Semi-Insulating 4H SiC
  Published in: Silicon Carbide and Related Materials 2005 (p531)