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Articles by author: Masashi Kato

• Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes
  Published in: Silicon Carbide and Related Materials 2011 (p309)
• Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation
  Published in: Silicon Carbide and Related Materials 2001 (p933)
• Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2008 (p381)
• Characterization of Photoelectrochemical Properties of SiC as a Water Splitting Material
  Published in: Silicon Carbide and Related Materials 2011 (p585)
• Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method
  Published in: Silicon Carbide and Related Materials 2009 (p207)
• Correlation between Intermediate-Temperature Embrittlement and Grain-Boundary Energy
  Published in: Intergranular and Interphase Boundaries in Materials (p649)
• Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p669)
• Correlation between Strain and Excess Carrier Lifetime in a 3C-SiC Wafer
  Published in: Silicon Carbide and Related Materials 2011 (p305)
• Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods
  Published in: Defects and Diffusion in Ceramics (p1)
• Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition
  Published in: Silicon Carbide and Related Materials 2007 (p373)
• Division and Delamination Processes of WC+Co Film Coated by High-Velocity Flame Spraying
  Published in: Fracture and Strength of Solids III (p907)
• Effects of Element Segregation on Nanometer Grain Boundary Sliding in Copper
  Published in: Intergranular and Interphase Boundaries in Materials (p165)
• Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques
  Published in: Silicon Carbide and Related Materials 2010 (p157)
• Electrochemical Etching of n-Type 6H-SiC Using Aqueous KOH Solutions
  Published in: Silicon Carbide and Related Materials - 2002 (p665)
• Epitaxy of Deposited α-Fe Films on High-Index Cu Substrate Planes
  Published in: Intergranular and Interphase Boundaries in Materials (p233)