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Articles by author: Masashi Suezawa

• <100> and<111> Configurations of Iron-Acceptor Pairs in Silicon Related to Stable and Metastable States
  Published in: Defects in Semiconductors 16 (p155)
• A Positron Lifetime Study of Defects in Plastically Deformed Silicon
  Published in: Defects in Semiconductors 18 (p1177)
• Acceptor Compensation in Nitrogen Doped Zinc Selenide
  Published in: Defects in Semiconductors 18 (p297)
• Annealing Processes of Vacancies in Silicon Induced by Electron Irradiation: Analysis Using Positron Lifetime Measurement
  Published in: Positron Annihilation - ICPA-10 (p423)
• Defect Reactions in Semiconductors
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p197)
• Deformation-Induced Vacancy Clusters in InP Studied by Positron Annihilation
  Published in: Positron Annihilation - ICPA-9 (p1061)
• EBIC and Cathodoluminescence Study of the Bonded Silicon Wafers
  Published in: Beam Injection Assessment of Defects in Semiconductors (p481)
• Effect of Transition Metal Impurities on the Photoluminescence of Deformed Si Crystal
  Published in: Defects in Semiconductors 18 (p1213)
• Emission and Capture Kinetics for a Hydrogen-Related Negative-U Center in Silicon: Evidence for Metastable Neutral Charge State
  Published in: Defects in Semiconductors 19 (p217)
• Formation of Hydrogen-Oxygen-Vacancy Complexes in Silicon
  Published in: Defects in Semiconductors 18 (p939)
• Generation Process of EL2 Centers in GaAs
  Published in: Defects in Semiconductors 15 (p129)
• Influence of Hydrogen on the Formation of Interstitial Agglomerates in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p129)
• Influence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p75)
• Interaction of Hydrogen with Radiation-Induced Defects in Cz-Si Crystals
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p403)
• Iron-Phosphorus Interaction in Si
  Published in: Defects in Semiconductors 17 (p1257)